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- W227943079 abstract "Undoped ZnO thin films, as well as 1%, 3% and 5% Gd-doped ZnO films, were deposited on p-type Si using spin coating. The structural properties of these thin films were analysed using X-ray diffraction, and the current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the Gd:ZnO/p-Si heterojunctions were compared with those of the undoped ZnO/p-Si heterojunctions. We found that Gd doping had a strong effect on the performance of the devices, and that the Gd:ZnO/p-Si heterojunctions formed with 1% Gd-doped ZnO were the most strongly rectifying, and had the highest barrier height and the lowest series resistance. Furthermore, the I–V measurements of the 1% Gd-doped ZnO/p-Si heterojunction exhibited the strongest response to light." @default.
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- W227943079 date "2015-10-01" @default.
- W227943079 modified "2023-09-27" @default.
- W227943079 title "The effect of Gd doping on the electrical and photoelectrical properties of Gd:ZnO/p-Si heterojunctions" @default.
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- W227943079 doi "https://doi.org/10.1016/j.jallcom.2015.04.212" @default.
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