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- W2280394065 abstract "The GaAs and Ga1−xAlxAs (0 ≤ x ≤ 0.3) epitaxial growth on GaAs (111)A substrate was carried out by organometallic vapor phase epitaxy at total pressure ~70 Torr. The regime of quantitative modulation of trimethyl gallium, Ga(CH3)3, gas flow was applied to optimize the atomic ratio between AIII and BV, while the tangential and normal parameters of the growth rate were comparable. Deposited GaAs and Ga1−xAlxAs (0 ≤ x ≤ 0.3) layers with crystallographic orientation of (111)A were obtained at ~0.1–0.2 Torr of arsine, AsH3, pressure and low crystallization temperature ~570–620 °C. Proposed optimization of the BV/AIII relationship and reaction conditions resulted in a smooth surface of the deposited layers. Using the technological approach, a si-GaAs/n-GaAs:Si/p-GaAlAs:Zn/p+–GaAs:Zn hetero-structure was successfully synthesized. Structural and electrical properties of the prepared epitaxial structure were studied by high-resolution x-ray diffraction and electrochemical capacitance-voltage profiling. Obtained experimental results confirmed excellent crystal and interfacial quality as well as steep transitions in charge carrier concentration through the deposited layers." @default.
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- W2280394065 date "2015-08-13" @default.
- W2280394065 modified "2023-09-27" @default.
- W2280394065 title "Formation of GaAs and Ga1−xAlxAs (0 ≤ x ≤ 0.3) layers on GaAs (111)A substrate by organometallic vapor phase epitaxy" @default.
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- W2280394065 doi "https://doi.org/10.1088/0031-8949/90/9/094001" @default.
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