FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2280490626> ?p ?o ?g. }

• W2280490626 endingPage "4959" @default.
• W2280490626 startingPage "4951" @default.
• W2280490626 abstract "As the world’s demand for energy grows, the search for cost competitive and earth abundant thin film photovoltaic absorbers is becoming increasingly important. A promising approach to tackle this challenge is through thin film photovoltaics made of elements that are abundant in the Earth’s crust. In this work, we focus on Cu2SnS3, a promising earth abundant absorber material. Recent publications have presented 3% and 6% device efficiencies using Cu2SnS3-based absorber materials and alloys, respectively. However, little is understood about the fundamental defect and doping physics of this material, which is needed for further improvements in device performance. Here, we identify the origins of the changes in doping in sputtered cubic Cu2SnS3 thin films using combinatorial experiments and first-principles theory. Experimentally, we find that the cubic Cu2SnS3 has a large phase width and that the electrical conductivity increases with increasing Cu and S content in the films, which cannot be fully explained by the theoretical point defect model. Instead, theoretical calcuations suggest that under Cu-rich conditions alloying with an isostructural metallic Cu3SnS4 phase occurs, causing high levels of p-type doping; this theory is consistent with experimental Raman and NEXAFS spectroscopy data. These experimental and theoretical works lead to the conclusion that Cu2SnS3 films must be grown both S-poor and Cu-poor in order to achieve moderate hole concentrations. These new insights enable the design of growth processes that target the desired carrier concentrations for solar cell fabrication. Using the strategies described above, we have been able to tune the carrier concentration over >3 orders of magnitude and achieve films with p-type doping of ≤1018 cm–3, facilitating future device integration of these films." @default.
• W2280490626 created "2016-06-24" @default.
• W2280490626 creator A5004499739 @default.
• W2280490626 creator A5004958064 @default.
• W2280490626 creator A5014378435 @default.
• W2280490626 creator A5015462149 @default.
• W2280490626 creator A5023540364 @default.
• W2280490626 creator A5037199063 @default.
• W2280490626 creator A5042534619 @default.
• W2280490626 creator A5042988082 @default.
• W2280490626 creator A5052864158 @default.
• W2280490626 creator A5054115247 @default.
• W2280490626 creator A5059948990 @default.
• W2280490626 date "2014-08-19" @default.
• W2280490626 modified "2023-10-12" @default.
• W2280490626 title "Control of Doping in Cu₂SnS₃ through Defects and Alloying" @default.
• W2280490626 cites W1644523840 @default.
• W2280490626 cites W1758968098 @default.
• W2280490626 cites W1965032243 @default.
• W2280490626 cites W1978674170 @default.
• W2280490626 cites W1979544533 @default.
• W2280490626 cites W1980645145 @default.
• W2280490626 cites W1984301183 @default.
• W2280490626 cites W1986731219 @default.
• W2280490626 cites W1992023444 @default.
• W2280490626 cites W1994974431 @default.
• W2280490626 cites W1999786403 @default.
• W2280490626 cites W2004562056 @default.
• W2280490626 cites W2006913274 @default.
• W2280490626 cites W2011707662 @default.
• W2280490626 cites W2015996786 @default.
• W2280490626 cites W2019469757 @default.
• W2280490626 cites W2020434199 @default.
• W2280490626 cites W2021275728 @default.
• W2280490626 cites W2023593811 @default.
• W2280490626 cites W2028982492 @default.
• W2280490626 cites W2029097388 @default.
• W2280490626 cites W2034853078 @default.
• W2280490626 cites W2045738083 @default.
• W2280490626 cites W2046248692 @default.
• W2280490626 cites W2046755392 @default.
• W2280490626 cites W2050229978 @default.
• W2280490626 cites W2053180185 @default.
• W2280490626 cites W2054704030 @default.
• W2280490626 cites W2057391928 @default.
• W2280490626 cites W2065093766 @default.
• W2280490626 cites W2065164939 @default.
• W2280490626 cites W2065382771 @default.
• W2280490626 cites W2067027712 @default.
• W2280490626 cites W2069468356 @default.
• W2280490626 cites W2070059498 @default.
• W2280490626 cites W2070150740 @default.
• W2280490626 cites W2070896740 @default.
• W2280490626 cites W2072430780 @default.
• W2280490626 cites W2072681751 @default.
• W2280490626 cites W2081518209 @default.
• W2280490626 cites W2081600828 @default.
• W2280490626 cites W2090239632 @default.
• W2280490626 cites W2091787964 @default.
• W2280490626 cites W2097585098 @default.
• W2280490626 cites W2128212102 @default.
• W2280490626 cites W2130383665 @default.
• W2280490626 cites W2136808739 @default.
• W2280490626 cites W2137416466 @default.
• W2280490626 cites W2158828541 @default.
• W2280490626 cites W2181246322 @default.
• W2280490626 cites W4239734992 @default.
• W2280490626 cites W4252186384 @default.
• W2280490626 doi "https://doi.org/10.1021/cm501339v" @default.
• W2280490626 hasPublicationYear "2014" @default.
• W2280490626 type Work @default.
• W2280490626 sameAs 2280490626 @default.
• W2280490626 citedByCount "131" @default.
• W2280490626 countsByYear W22804906262015 @default.
• W2280490626 countsByYear W22804906262016 @default.
• W2280490626 countsByYear W22804906262017 @default.
• W2280490626 countsByYear W22804906262018 @default.
• W2280490626 countsByYear W22804906262019 @default.
• W2280490626 countsByYear W22804906262020 @default.
• W2280490626 countsByYear W22804906262021 @default.
• W2280490626 countsByYear W22804906262022 @default.
• W2280490626 countsByYear W22804906262023 @default.
• W2280490626 crossrefType "journal-article" @default.
• W2280490626 hasAuthorship W2280490626A5004499739 @default.
• W2280490626 hasAuthorship W2280490626A5004958064 @default.
• W2280490626 hasAuthorship W2280490626A5014378435 @default.
• W2280490626 hasAuthorship W2280490626A5015462149 @default.
• W2280490626 hasAuthorship W2280490626A5023540364 @default.
• W2280490626 hasAuthorship W2280490626A5037199063 @default.
• W2280490626 hasAuthorship W2280490626A5042534619 @default.
• W2280490626 hasAuthorship W2280490626A5042988082 @default.
• W2280490626 hasAuthorship W2280490626A5052864158 @default.
• W2280490626 hasAuthorship W2280490626A5054115247 @default.
• W2280490626 hasAuthorship W2280490626A5059948990 @default.
• W2280490626 hasConcept C115624301 @default.
• W2280490626 hasConcept C120665830 @default.
• W2280490626 hasConcept C121332964 @default.
• W2280490626 hasConcept C125287762 @default.

• next