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• W2281372018 abstract "The optical properties of polar semiconductors are affected by strain, which introduces specific manufacturing concerns into optoelectronics applications. The authors demonstrate that detrimental crystal polarization effects can be fully compensated via a sequence of reverse interfaces, while maintaining the most natural, polar direction for crystal growth. As a result, built-in electric fields become a viable tuning parameter---or they can be eliminated entirely, boosting excitonic decay rates by orders of magnitude." @default.
• W2281372018 created "2016-06-24" @default.
• W2281372018 creator A5028689448 @default.
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• W2281372018 date "2017-02-06" @default.
• W2281372018 modified "2023-10-01" @default.
• W2281372018 title "Shielding Electrostatic Fields in Polar Semiconductor Nanostructures" @default.
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• W2281372018 doi "https://doi.org/10.1103/physrevapplied.7.024004" @default.
• W2281372018 hasPublicationYear "2017" @default.
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