Matches in SemOpenAlex for { <https://semopenalex.org/work/W2282284471> ?p ?o ?g. }
- W2282284471 abstract "One of the main features of semiconductors is that their electronic properties may be drastically modified by the introduction of small numbers of foreign atoms or lattice defects. Impurities and imperfections are determining the type and the density of the majority carriers as well as the lifetime of injected minority carriers. Broadly speaking, the energy levels of conductivity dopants are close to the conduction or the valence band edges while they are nearer to midgap position for effective lifetime dopants. Therefore, such levels are traditionally referred to as shallow or deep, respectively." @default.
- W2282284471 created "2016-06-24" @default.
- W2282284471 creator A5038776526 @default.
- W2282284471 date "1988-01-01" @default.
- W2282284471 modified "2023-09-23" @default.
- W2282284471 title "Deep Levels at Compound-Semiconductor Interfaces" @default.
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- W2282284471 doi "https://doi.org/10.1007/978-1-4899-2382-0_7" @default.
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