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- W2283653542 abstract "Observations made more than ten years ago1 showed that SiC could be made amorphous at cryogenic temperatures by in-situ 300kV electron irradiation. However, high-voltage electron microscope (HVEM) results indicate a threshold voltage of 725 kV for amorphization of SiC at 140 K. In addition, a recent review exposes the considerable uncertainty in the literature regarding displacement energies for SiC. Therefore, further experiments have been performed in a Philips CM30 (LaB 6 cathode) with a Gatan double-tilt cooling holder in an attempt to determine the threshold voltage for amorphization at ∼ 140 K. Sintered α-SiC (defected 6H polytype), beam direction B=< 1120 >, and probes containing ∽ 75 nA in ∽0.5 μm, were used. Amorphization occurred in <10 min at 300 kV and after ∽60 min at 180 kV (Fig. 1); visible darkening occurred at lower voltages and doses. Similar behavior occurred for B=[0001]. The critical dose for amorphization was measured as a function of accelerating voltage." @default.
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- W2283653542 date "1998-07-01" @default.
- W2283653542 modified "2023-09-23" @default.
- W2283653542 title "Silicon Carbide Amorphization by Electron Irradiation" @default.
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- W2283653542 doi "https://doi.org/10.1017/s1431927600023618" @default.
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