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- W2285301917 abstract "La2O3 films are grown on Si (100) substrates by the radio-frequency magnetron sputtering technique. The band alignment of the La2O3/Si heterojunction is analyzed by the x-ray photoelectron spectroscopy. The valence-band and the conduction-band offsets of La2O3 films to Si substrates are found to be 2.40±0.1 and 1.66±0.3eV, respectively. Based on O 1s energy loss spectrum analysis, it can be noted that the energy gap of La2O3 films is 5.18±0.2 eV, which is confirmed by the ultra-violet visible spectrum. According to the suitable band offset and large band gap, it can be concluded that La2O3 could be a promising candidate to act as high-k gate dielectrics." @default.
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- W2285301917 date "2014-02-01" @default.
- W2285301917 modified "2023-10-11" @default.
- W2285301917 title "Band Alignment and Band Gap Characterization of La 2 O 3 Films on Si Substrates Grown by Radio Frequency Magnetron Sputtering" @default.
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- W2285301917 doi "https://doi.org/10.1088/0256-307x/31/2/027702" @default.
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