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- W2285958123 abstract "A four-valued memory circuit based on three-peak MOS-HBT-NDR circuit is investigated. The MOS-HBT-NDR circuit is made of metal-oxide-semiconductor field-effect-transistor (MOS) and heterojunction-bipolar-transistor (HBT) devices. However it can show the negative-differential-resistance (NDR) current-voltage characteristic by suitably arranging the MOS parameters. The four-valued memory circuit is constructed by a three paralleled-connected MOS-HBT-NDR circuit as the driver and a resistor as the load. The simulation is based on the standard 0.35μm SiGe process." @default.
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- W2285958123 date "2007-07-09" @default.
- W2285958123 modified "2023-09-27" @default.
- W2285958123 title "Design of four-valued memory using three-peak MOS-HBT-NDR circuits" @default.
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