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• W2288931891 abstract "Amorphous indium tin oxide (a-ITO) thin-film transistors (TFTs) were fabricated with the channel layer deposited by the cosputtering of In <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> and SnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ceramic targets. It is shown that the cosputter-deposited ITO film for the channel layer well keeps in the amorphous structure even after being annealed at 300° if the sputtering powers of the two targets are properly selected. The fabricated a-ITO TFTs in the cosputtering technique show a high device performance, including a field-effect mobility of 25.9 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> V <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> s <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> , a subthreshold swing of 0.33 V/decade, an ON/OFF-current ratio of 1 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>9</sup> , and a desirable threshold voltage variation range. In addition, an acceptable characteristic stability under electrical stress is also observed in the passivated and annealed a-ITO TFTs." @default.
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• W2288931891 date "2016-03-01" @default.
• W2288931891 modified "2023-09-27" @default.
• W2288931891 title "Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique" @default.
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• W2288931891 doi "https://doi.org/10.1109/ted.2015.2513421" @default.
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