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- W2289058159 abstract "We have developed a novel wafer-scale uniform layer-by-layer etching technology based on the etching reaction of oxygen molecules with Ge surfaces. The advantages of this etching technology are as follows. (1) Layer-by-layer etching can be achieved, yielding an atomically flat step-terrace surface. (2) Because of the very small activation energy (<0.1 eV) of the etching reaction, this technology is free from etch rate variation caused by temperature inhomogeneity over large wafers. (3) No plasma damage occurs as a result of O2 molecule reactions with anisotropic etching. These features are applicable to the fabrication of three-dimensional Ge channels." @default.
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- W2289058159 date "2015-12-01" @default.
- W2289058159 modified "2023-09-25" @default.
- W2289058159 title "Novel wafer-scale uniform layer-by-layer etching technology for line edge roughness reduction and surface flattening of 3D Ge channels" @default.
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- W2289058159 doi "https://doi.org/10.1109/iedm.2015.7409703" @default.
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