FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2289166651> ?p ?o ?g. }

• W2289166651 endingPage "6300" @default.
• W2289166651 startingPage "6293" @default.
• W2289166651 abstract "A protocol has been developed to selectively process low-k SiCOH dielectric substrates in order to activate or deactivate them toward the deposition of thin solid films by chemical (CVD or ALD) means. The original SiCOH surfaces are hydrophobic, an indication that they are alkyl- rather than silanol-terminated and that, consequently, they are fairly unreactive. However, the chemical-mechanical polishing (CMP) sometimes done during microelectronics fabrication renders them hydrophilic and reactive. It was shown here that silylation of the CMP-treated surfaces with any of a number of well-known silylation agents such as HMDS, ODTS, or OTS caps the reactive silanol surface groups and turns them back to being hydrophilic and unreactive. Further exposure of any of the passivated surfaces to a combination of ozone and UV radiation reinstates their hydrophilicity and chemical activity. Importantly, it was also demonstrated that all these changes could be induced without altering the original mechanical, optical, or electrical properties of the samples: atomic force microscopy (AFM) images show no increase in roughness, ellipsometry measurements yield the same values for the index of refraction and dielectric constant, and infrared absorption spectroscopy attests to the preservation of the organic fragments present in the original SiCOH samples. The chemical selectivity of the resulting surfaces was tested for the atomic layer deposition (ALD) of HfO2 films, which could be grown only on the UV/O3 treated substrates." @default.
• W2289166651 created "2016-06-24" @default.
• W2289166651 creator A5001014412 @default.
• W2289166651 creator A5032798090 @default.
• W2289166651 creator A5074539493 @default.
• W2289166651 date "2016-03-01" @default.
• W2289166651 modified "2023-09-27" @default.
• W2289166651 title "Chemical Treatment of Low-k Dielectric Surfaces for Patterning of Thin Solid Films in Microelectronic Applications" @default.
• W2289166651 cites W1463728261 @default.
• W2289166651 cites W1969532431 @default.
• W2289166651 cites W1977199911 @default.
• W2289166651 cites W1978887676 @default.
• W2289166651 cites W1980569530 @default.
• W2289166651 cites W1990244367 @default.
• W2289166651 cites W1991117616 @default.
• W2289166651 cites W1995384154 @default.
• W2289166651 cites W1997619422 @default.
• W2289166651 cites W2000655344 @default.
• W2289166651 cites W2013212709 @default.
• W2289166651 cites W2013746255 @default.
• W2289166651 cites W2020340676 @default.
• W2289166651 cites W2022093205 @default.
• W2289166651 cites W2023603575 @default.
• W2289166651 cites W2024792762 @default.
• W2289166651 cites W2026609365 @default.
• W2289166651 cites W2030492127 @default.
• W2289166651 cites W2035733716 @default.
• W2289166651 cites W2038085395 @default.
• W2289166651 cites W2038845950 @default.
• W2289166651 cites W2041483259 @default.
• W2289166651 cites W2042021574 @default.
• W2289166651 cites W2042343170 @default.
• W2289166651 cites W2047305768 @default.
• W2289166651 cites W2047577417 @default.
• W2289166651 cites W2065239354 @default.
• W2289166651 cites W2075456203 @default.
• W2289166651 cites W2076520903 @default.
• W2289166651 cites W2078984816 @default.
• W2289166651 cites W2083731597 @default.
• W2289166651 cites W2085371722 @default.
• W2289166651 cites W2091900811 @default.
• W2289166651 cites W2102576125 @default.
• W2289166651 cites W2106603672 @default.
• W2289166651 cites W2116669660 @default.
• W2289166651 cites W2125129847 @default.
• W2289166651 cites W2128659391 @default.
• W2289166651 cites W2130328302 @default.
• W2289166651 cites W2137032131 @default.
• W2289166651 cites W2140423820 @default.
• W2289166651 cites W2145578865 @default.
• W2289166651 cites W2156923729 @default.
• W2289166651 cites W2158932701 @default.
• W2289166651 cites W2159296063 @default.
• W2289166651 cites W2163500195 @default.
• W2289166651 cites W2164070688 @default.
• W2289166651 cites W2226082717 @default.
• W2289166651 cites W2285304734 @default.
• W2289166651 cites W2319905887 @default.
• W2289166651 cites W2322312667 @default.
• W2289166651 cites W2322558905 @default.
• W2289166651 cites W96865455 @default.
• W2289166651 doi "https://doi.org/10.1021/acsami.6b00495" @default.
• W2289166651 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/26956428" @default.
• W2289166651 hasPublicationYear "2016" @default.
• W2289166651 type Work @default.
• W2289166651 sameAs 2289166651 @default.
• W2289166651 citedByCount "18" @default.
• W2289166651 countsByYear W22891666512016 @default.
• W2289166651 countsByYear W22891666512017 @default.
• W2289166651 countsByYear W22891666512018 @default.
• W2289166651 countsByYear W22891666512019 @default.
• W2289166651 countsByYear W22891666512020 @default.
• W2289166651 countsByYear W22891666512021 @default.
• W2289166651 countsByYear W22891666512022 @default.
• W2289166651 countsByYear W22891666512023 @default.
• W2289166651 crossrefType "journal-article" @default.
• W2289166651 hasAuthorship W2289166651A5001014412 @default.
• W2289166651 hasAuthorship W2289166651A5032798090 @default.
• W2289166651 hasAuthorship W2289166651A5074539493 @default.
• W2289166651 hasConcept C115537861 @default.
• W2289166651 hasConcept C127413603 @default.
• W2289166651 hasConcept C133386390 @default.
• W2289166651 hasConcept C159985019 @default.
• W2289166651 hasConcept C161790260 @default.
• W2289166651 hasConcept C171250308 @default.
• W2289166651 hasConcept C178790620 @default.
• W2289166651 hasConcept C180088628 @default.
• W2289166651 hasConcept C18293161 @default.
• W2289166651 hasConcept C185592680 @default.
• W2289166651 hasConcept C187937830 @default.
• W2289166651 hasConcept C19067145 @default.
• W2289166651 hasConcept C192562407 @default.
• W2289166651 hasConcept C2777581007 @default.
• W2289166651 hasConcept C2778645564 @default.
• W2289166651 hasConcept C2779227376 @default.
• W2289166651 hasConcept C2780263894 @default.
• W2289166651 hasConcept C42360764 @default.
• W2289166651 hasConcept C49040817 @default.

• next