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- W2289724343 abstract "As electronic product becomes smaller and lighter with an increasing number of function ↚ the demand for high density and high integration becomes stronger. Interposers for system in package will became more and more important for advanced electronic systems. Silicon interposers with through silicon vias (TSV) and back end of line (BEOL) wiring offer compelling benefits for 2.5D and 3D system integration; however, they are limited by high cost and high electrical loss. On the other hand, glass has many properties that make it an ideal substrate for interposer substrates such as; ultra high resistivity, adjustable thermal expansion (CTE) and manufacturability with large panel size. Furthermore, glass via formation capabilities have dramatically improved over the past several years. Fully populated wafers with >100,000 through holes (50μm diameter) are fabricated today with 300μm thick glass. This paper presents the demonstration of TSV interposers and TGV interposers with fine pitch high aspect ratio through vias." @default.
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- W2289724343 date "2014-10-01" @default.
- W2289724343 modified "2023-10-14" @default.
- W2289724343 title "Comparison of Fabrication Process Capability and Electrical Performance with Silicon and Glass Interposers" @default.
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- W2289724343 doi "https://doi.org/10.4071/isom-wa11" @default.
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