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- W2289738525 abstract "InGaAs FinFETs with sub-10 nm fin widths were fabricated for the first time using precision dry etching and digital etch. We find that the threshold voltage, V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>t</sub> , becomes highly sensitive to the fin width, W <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>f</sub> , in the sub-10 nm W <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>f</sub> range. 2D Poisson-Schrodinger simulations suggest that this is due to quantization effects. We also show that in the quantum regime, a sidewall slope below 850 significantly reduce V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>t</sub> variation at the same drawn dimensions." @default.
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- W2289738525 date "2015-12-01" @default.
- W2289738525 modified "2023-09-26" @default.
- W2289738525 title "Quantum-size effects in sub 10-nm fin width InGaAs FinFETs" @default.
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- W2289738525 doi "https://doi.org/10.1109/iedm.2015.7409807" @default.
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