Matches in SemOpenAlex for { <https://semopenalex.org/work/W2290111054> ?p ?o ?g. }
Showing items 1 to 95 of
95
with 100 items per page.
- W2290111054 abstract "1.1 Motivation for implementing high dielectric constant gate dielectric for advanced CMOS scaling Semiconductor devices need to have good performance, with a low cost and low power dissipation. For decades, research and development of semiconductor processing technology and device integration have focused on enhancing performance and reducing costs using SiO2 as the gate dielectric and doped polysilicon as the gate electrode. The most effective way to enhance performance and reduce costs is to scale the device gate length and gate oxide. Scaling the gate length results in fabricating more devices per wafer (i.e., increase the device density) and thus reduce the cost per chip, while scaling the gate oxide enhances the drive current and reduces the short channel effects due to gate length scaling. However, as the gate oxide becomes thinner, the power to operate transistors increases because of greater gate oxide leakage current. To resolve this high gate oxide leakage problem, the mechanism of the carriers tunneling through the gate dielectric must be better understood. In an ideal metal-insulator-semiconductor (MIS) device, the current conduction in the insulator should be zero. In a real MIS device, however, current can flow through the insulating film by various conduction mechanisms. The two primary conduction mechanisms for electron tunneling through high quality gate dielectric are discussed below." @default.
- W2290111054 created "2016-06-24" @default.
- W2290111054 creator A5087237028 @default.
- W2290111054 date "2010-01-01" @default.
- W2290111054 modified "2023-10-01" @default.
- W2290111054 title "The Progress and Challenges of Applying High-k/Metal-Gated Devices to Advanced CMOS Technologies" @default.
- W2290111054 cites W1485117035 @default.
- W2290111054 cites W1487585329 @default.
- W2290111054 cites W1489394941 @default.
- W2290111054 cites W1591282533 @default.
- W2290111054 cites W1634198957 @default.
- W2290111054 cites W1939343666 @default.
- W2290111054 cites W1973221791 @default.
- W2290111054 cites W1985397007 @default.
- W2290111054 cites W1992343392 @default.
- W2290111054 cites W1996992035 @default.
- W2290111054 cites W2003645630 @default.
- W2290111054 cites W2012373184 @default.
- W2290111054 cites W2019124887 @default.
- W2290111054 cites W2026156941 @default.
- W2290111054 cites W2030976617 @default.
- W2290111054 cites W2043441124 @default.
- W2290111054 cites W2046412353 @default.
- W2290111054 cites W2070396057 @default.
- W2290111054 cites W2079719052 @default.
- W2290111054 cites W2089856058 @default.
- W2290111054 cites W2093672107 @default.
- W2290111054 cites W2100974559 @default.
- W2290111054 cites W2102706597 @default.
- W2290111054 cites W2112344289 @default.
- W2290111054 cites W2118197415 @default.
- W2290111054 cites W2125954157 @default.
- W2290111054 cites W2126132231 @default.
- W2290111054 cites W2126967076 @default.
- W2290111054 cites W2139096489 @default.
- W2290111054 cites W2141704677 @default.
- W2290111054 cites W2145549403 @default.
- W2290111054 cites W2149806877 @default.
- W2290111054 cites W2157881933 @default.
- W2290111054 cites W2167223962 @default.
- W2290111054 cites W2230728100 @default.
- W2290111054 cites W2466771216 @default.
- W2290111054 cites W2533583705 @default.
- W2290111054 cites W2534432696 @default.
- W2290111054 cites W2536101286 @default.
- W2290111054 cites W2538643685 @default.
- W2290111054 cites W2540014808 @default.
- W2290111054 cites W2541153443 @default.
- W2290111054 cites W2542593568 @default.
- W2290111054 cites W2544781338 @default.
- W2290111054 cites W2545114894 @default.
- W2290111054 cites W3016972814 @default.
- W2290111054 doi "https://doi.org/10.5772/6878" @default.
- W2290111054 hasPublicationYear "2010" @default.
- W2290111054 type Work @default.
- W2290111054 sameAs 2290111054 @default.
- W2290111054 citedByCount "10" @default.
- W2290111054 countsByYear W22901110542012 @default.
- W2290111054 countsByYear W22901110542013 @default.
- W2290111054 countsByYear W22901110542014 @default.
- W2290111054 countsByYear W22901110542015 @default.
- W2290111054 countsByYear W22901110542016 @default.
- W2290111054 countsByYear W22901110542018 @default.
- W2290111054 countsByYear W22901110542020 @default.
- W2290111054 crossrefType "book-chapter" @default.
- W2290111054 hasAuthorship W2290111054A5087237028 @default.
- W2290111054 hasBestOaLocation W22901110541 @default.
- W2290111054 hasConcept C171250308 @default.
- W2290111054 hasConcept C192562407 @default.
- W2290111054 hasConcept C41008148 @default.
- W2290111054 hasConcept C46362747 @default.
- W2290111054 hasConcept C49040817 @default.
- W2290111054 hasConceptScore W2290111054C171250308 @default.
- W2290111054 hasConceptScore W2290111054C192562407 @default.
- W2290111054 hasConceptScore W2290111054C41008148 @default.
- W2290111054 hasConceptScore W2290111054C46362747 @default.
- W2290111054 hasConceptScore W2290111054C49040817 @default.
- W2290111054 hasLocation W22901110541 @default.
- W2290111054 hasLocation W22901110542 @default.
- W2290111054 hasOpenAccess W2290111054 @default.
- W2290111054 hasPrimaryLocation W22901110541 @default.
- W2290111054 hasRelatedWork W2018879842 @default.
- W2290111054 hasRelatedWork W2325423348 @default.
- W2290111054 hasRelatedWork W2737498735 @default.
- W2290111054 hasRelatedWork W2744391499 @default.
- W2290111054 hasRelatedWork W2748952813 @default.
- W2290111054 hasRelatedWork W2898370298 @default.
- W2290111054 hasRelatedWork W2899084033 @default.
- W2290111054 hasRelatedWork W3120461830 @default.
- W2290111054 hasRelatedWork W3144504424 @default.
- W2290111054 hasRelatedWork W4292492973 @default.
- W2290111054 isParatext "false" @default.
- W2290111054 isRetracted "false" @default.
- W2290111054 magId "2290111054" @default.
- W2290111054 workType "book-chapter" @default.