FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2290149501> ?p ?o ?g. }

• W2290149501 abstract "Thin films for solar cell application have been found to be unstable when used in extreme weather conditions. Therefore there is a quest for the study of effects on light soaking and exposure to outdoor conditions on SnxSey/ZnO:Sn solar cell. A p-n junction thin film solar cell was prepared using SnSe as the absorber layer and ZnO:Sn as a window layer. Tin selenide thin films were prepared at different ratios using pure tin pellets and selenium powder. The glass tube containing mixed tin with selenium at a specific ratio was filled with argon gas and heated at temperature of 350 o C until all the metals melted. Zinc doped with tin was prepared using tin pellets and zinc granules in a similar procedure. The resulting material was cut into ingots, respectively and used in preparing thin films by resistive evaporation. The evaporation was done using Edwards 306 AUTO coating unit at a chamber pressure of 5.0 × 10 -5 mbars. The prepared thin films of tin selenide and tin doped zinc oxide were characterized for optical and electrical properties. The optical measurements were done using a Shimadzu type 3700 DUV UV-VIS-NIR spectrophotometer. The transmittance, reflectance and absorptance spectra data obtained were analyzed using the scout software. The calculated optical band gap for tin doped zinc oxide ranged between 3.72eV and 4.08eV while for tin selenide increased from 0.70eV to 1.63eV with increase in Sn:Se ratio. The calculated refractive index for tin selenide decreased from 3.57 to 2.77 with increase in selenium in the sample, while that of tin doped zinc oxide increased from 0.73 for undoped zinc oxide to 1.07 at 4% then reduced to 0.84 at 8% tin doping. The electrical measurements were carried out using a four point probe configuration at room temperature (25 o C) to obtain the sheet resistivity. Measurement of sheet resistivity was done for both prepared and annealed samples. The sheet resistivity of tin selenide decreased as the ratio of tin to selenium increased reaching a minimum of 19.11Ωcm at 1:0.6 for as prepared samples and 15.13Ωcm for annealed samples. Sheet resistance for tin doped zinc oxide reduced with increase in tin doping to a minimum of 11.92Ωcm at 4% tin doping for as prepared samples and 11.89Ωcm for annealed samples. The SnSe/ZnO:Sn p-n junction solar cell was fabricated by double depositing the optimized films on a microscope glass slide. The current voltage (I-V) characteristics of the p-n junction diode was obtained using a solar simulator connected to Keithley 2400 series high voltage source meter and the results were analyzed using Lab view software. The data obtained was used to determine solar cell parameters. The parameters calculated were, Isc = 1.1304mA/cm 2 , Voc = 0.5847V, FF = 0.6359 with efficiency η = 0.4204%. The stability test on the solar cell was performed by subjecting the solar cell to both low and elevated temperature. The short circuit current increased from Isc = 1.1655mA/cm 2 to Isc = 1.1730mA/cm 2 at 298K and 423K respectively. At low temperature of -4 o C the Isc = 0.9563mA/cm 2 . The solar cell was also subjected to uncontrolled outdoor conditions for one week. The Isc increased from 1.0764mA/cm 2 after one day to 1.1039mA/cm 2 in the third day. On damp environment, also Isc increased from 1.0902mA/cm 2 to 1.1771mA/cm 2 in the third day. The solar cell was also subjected to light soaking for 120 minutes. The Isc increased from 1.0704mA/cm 2 after 15 minutes to 1.1894mA/cm 2 in 120 minutes. The efficiency of the solar cell ranged between 0.4203% at 75 minutes and 0.4202% in 120 minutes. The solar cell was stable on light soaking but greatly affected by exposure to outdoor conditions. More research on the same is recommended for a treated solar cell, use of appropriate anti-reflective coating (ARC) as well as structural analysis of the thin films." @default.
• W2290149501 created "2016-06-24" @default.
• W2290149501 creator A5049574260 @default.
• W2290149501 date "2014-01-01" @default.
• W2290149501 modified "2023-09-26" @default.
• W2290149501 title "Optoelectrical and stability characterization of SnxSey/ZnO:Sn solar cell prepared by resistive evaporation" @default.
• W2290149501 cites W1606765005 @default.
• W2290149501 cites W1626099979 @default.
• W2290149501 cites W1963597464 @default.
• W2290149501 cites W1966655580 @default.
• W2290149501 cites W1980710113 @default.
• W2290149501 cites W1990259672 @default.
• W2290149501 cites W2000234968 @default.
• W2290149501 cites W2020426991 @default.
• W2290149501 cites W2037132193 @default.
• W2290149501 cites W2063003590 @default.
• W2290149501 cites W2081590770 @default.
• W2290149501 cites W2083959223 @default.
• W2290149501 cites W2097804638 @default.
• W2290149501 cites W2169502762 @default.
• W2290149501 cites W2187881550 @default.
• W2290149501 cites W224633732 @default.
• W2290149501 cites W2272155496 @default.
• W2290149501 cites W2788533967 @default.
• W2290149501 cites W3188014977 @default.
• W2290149501 cites W2182416086 @default.
• W2290149501 hasPublicationYear "2014" @default.
• W2290149501 type Work @default.
• W2290149501 sameAs 2290149501 @default.
• W2290149501 citedByCount "0" @default.
• W2290149501 crossrefType "dissertation" @default.
• W2290149501 hasAuthorship W2290149501A5049574260 @default.
• W2290149501 hasConcept C113196181 @default.
• W2290149501 hasConcept C121332964 @default.
• W2290149501 hasConcept C159985019 @default.
• W2290149501 hasConcept C171250308 @default.
• W2290149501 hasConcept C181966813 @default.
• W2290149501 hasConcept C185592680 @default.
• W2290149501 hasConcept C19067145 @default.
• W2290149501 hasConcept C191897082 @default.
• W2290149501 hasConcept C192562407 @default.
• W2290149501 hasConcept C2779227376 @default.
• W2290149501 hasConcept C2780824857 @default.
• W2290149501 hasConcept C2780924660 @default.
• W2290149501 hasConcept C32737372 @default.
• W2290149501 hasConcept C43617362 @default.
• W2290149501 hasConcept C49040817 @default.
• W2290149501 hasConcept C525849907 @default.
• W2290149501 hasConcept C535196362 @default.
• W2290149501 hasConcept C57863236 @default.
• W2290149501 hasConcept C61441594 @default.
• W2290149501 hasConcept C97355855 @default.
• W2290149501 hasConceptScore W2290149501C113196181 @default.
• W2290149501 hasConceptScore W2290149501C121332964 @default.
• W2290149501 hasConceptScore W2290149501C159985019 @default.
• W2290149501 hasConceptScore W2290149501C171250308 @default.
• W2290149501 hasConceptScore W2290149501C181966813 @default.
• W2290149501 hasConceptScore W2290149501C185592680 @default.
• W2290149501 hasConceptScore W2290149501C19067145 @default.
• W2290149501 hasConceptScore W2290149501C191897082 @default.
• W2290149501 hasConceptScore W2290149501C192562407 @default.
• W2290149501 hasConceptScore W2290149501C2779227376 @default.
• W2290149501 hasConceptScore W2290149501C2780824857 @default.
• W2290149501 hasConceptScore W2290149501C2780924660 @default.
• W2290149501 hasConceptScore W2290149501C32737372 @default.
• W2290149501 hasConceptScore W2290149501C43617362 @default.
• W2290149501 hasConceptScore W2290149501C49040817 @default.
• W2290149501 hasConceptScore W2290149501C525849907 @default.
• W2290149501 hasConceptScore W2290149501C535196362 @default.
• W2290149501 hasConceptScore W2290149501C57863236 @default.
• W2290149501 hasConceptScore W2290149501C61441594 @default.
• W2290149501 hasConceptScore W2290149501C97355855 @default.
• W2290149501 hasLocation W22901495011 @default.
• W2290149501 hasOpenAccess W2290149501 @default.
• W2290149501 hasPrimaryLocation W22901495011 @default.
• W2290149501 hasRelatedWork W142672897 @default.
• W2290149501 hasRelatedWork W1581078086 @default.
• W2290149501 hasRelatedWork W1678517014 @default.
• W2290149501 hasRelatedWork W1981429750 @default.
• W2290149501 hasRelatedWork W2013636383 @default.
• W2290149501 hasRelatedWork W2034883599 @default.
• W2290149501 hasRelatedWork W2064698052 @default.
• W2290149501 hasRelatedWork W2099746934 @default.
• W2290149501 hasRelatedWork W2240909671 @default.
• W2290149501 hasRelatedWork W2245323979 @default.
• W2290149501 hasRelatedWork W2360977503 @default.
• W2290149501 hasRelatedWork W2523907170 @default.
• W2290149501 hasRelatedWork W2557278819 @default.
• W2290149501 hasRelatedWork W2558324302 @default.
• W2290149501 hasRelatedWork W3006731731 @default.
• W2290149501 hasRelatedWork W3017127267 @default.
• W2290149501 hasRelatedWork W3034087617 @default.
• W2290149501 hasRelatedWork W3138169855 @default.
• W2290149501 hasRelatedWork W3176668116 @default.
• W2290149501 hasRelatedWork W2475391716 @default.
• W2290149501 isParatext "false" @default.
• W2290149501 isRetracted "false" @default.
• W2290149501 magId "2290149501" @default.
• W2290149501 workType "dissertation" @default.