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- W2291006908 abstract "A leak path passivation (LPP) technology for InGaN solar cells with photo-response up to 570 nm was developed by inserting in situ monolayers of Al-N into active layers. The InGaN layer in the passivated sample is partially relaxed and incorporates more than 23.5% In. By adopting in situ Al-N LPP, the open circuit voltage increases from 0.96 V to 1.35 V under one sun illumination (1.45–1.68 V under 72 suns), and the dark shunt resistance increases from 3.6 kΩ cm2 to 12.6 kΩ cm2, leading to an increase in power conversion efficiency by a factor of 2.0–2.26 (1–72 suns). This in situ Al-N LPP approach paves a way to exploit the full potential of InGaN for high efficiency solar cell application, accepting the reality of defective high-In-content thick and relaxed InGaN." @default.
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- W2291006908 date "2016-02-29" @default.
- W2291006908 modified "2023-09-27" @default.
- W2291006908 title "Leak path passivation by <i>in situ</i> Al-N for InGaN solar cells operating at wavelengths up to 570 nm" @default.
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- W2291006908 doi "https://doi.org/10.1063/1.4942507" @default.
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