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- W229103010 abstract "A simulation study has been carried out on a Schottky (metal) source drain (S/D) double gate (DG) SOI MOSFET. Unlike the doped S/D structure, this device can operate both in accumulation and inversion mode. Tunneling is the dominant current mechanism in Schottky S/D DG SOI MOSFET. A comparison study has been performed between metal S/D double gate SOI MOSFET and a similar structure with doped S/D. For the gate length LG=20nm, metal source/drain structure has better (Ion/Ioff) ratio than that of doped S/D structure. Reducing Schottky barrier height (SBH) improves (Ion/Ioff) and transconductance (gm) in Schottky S/D DG SOI MOSFET. Gate Induced Drain Leakage current is much smaller in doped S/D structure than in Schottky S/D DG SOI MOSFET. Increasing S/D underlap reduces I off in both structures. A reduction in gate voltage results in a reduction of depletion layer width at source side and thus results in a reduction of gm." @default.
- W229103010 created "2016-06-24" @default.
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- W229103010 date "2007-01-01" @default.
- W229103010 modified "2023-09-27" @default.
- W229103010 title "A Comparison Study of Electrical Characteristics of Schottky Source Drain and Doped Source Drain Double Gate SOI MOSFET" @default.
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