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• W2291762255 abstract "Rigorous ab initio quantum transport simulation based on flexible plane wave method has been presented to predict the performance of mono-layer transition-metal dichalcogenide (TMD) tunnel field-effect transistors (TFETs) at scaling limit. WTe2-TFET appears as the most promising candidate for both high-performance (HP) and low-operating-power (LOP) transistors with the ION as high as 1890 μA/μm, which is very close to the ITRS 2024 requirements for 7nm physical gate length scaling. While other TMD-TFETs are found much less applicable. In addition, performance enhancement based on atomic defect engineering has been proposed. The simulation reveals transition metal vacancy inside the tunneling diode can dramatically increase ION while keeping IOFF unchanged. As an evidence, simulation shows Mo-vacancy engineered mono-layer MoS2-TFET with 6.3nm physical gate length has 15 times larger ION (1324μA/μm) and the same IOFF (1.2×10−2 μA/μm) compared to the pristine device." @default.
• W2291762255 created "2016-06-24" @default.
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• W2291762255 date "2015-12-01" @default.
• W2291762255 modified "2023-09-23" @default.
• W2291762255 title "How good is mono-layer transition-metal dichalcogenide tunnel field-effect transistors in sub-10 nm? - An ab initio simulation study" @default.
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• W2291762255 doi "https://doi.org/10.1109/iedm.2015.7409683" @default.
• W2291762255 hasPublicationYear "2015" @default.
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