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• W2291926330 endingPage "1019" @default.
• W2291926330 startingPage "1013" @default.
• W2291926330 abstract "The mobility of current carriers in the channel of FETs usually depends on the applied gate voltage. This paper presents experimental evidence that the electron mobility in the 2-D electron gas under the gate of AlGaN/GaN high-electron-mobility transistors (HEMTs) is actually independent of the gate voltage. This demonstration of the gate-voltage independence of the electron mobility relates to power HEMTs, and it was achieved by introducing a new method for the mobility measurement. The gate-voltage independence of the electron mobility was observed for a wide range of temperature, from 25 °C to 300 °C. Furthermore, it is confirmed that the HEMT mobility decreases with increased temperature according to the power law ( $T^{-k}$ ) and with a quite high value of the power-law coefficient ( $k = 2.45$ )." @default.
• W2291926330 created "2016-06-24" @default.
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• W2291926330 date "2016-03-01" @default.
• W2291926330 modified "2023-09-27" @default.
• W2291926330 title "Gate-Voltage Independence of Electron Mobility in Power AlGaN/GaN HEMTs" @default.
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• W2291926330 doi "https://doi.org/10.1109/ted.2016.2519533" @default.
• W2291926330 hasPublicationYear "2016" @default.
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