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- W2292593001 abstract "AlxInyGa1-x-yN epilayers have been grown by metal organic chemical vapor deposition (MOCVD) at different temperatures from 740 to 940 °C. The incorporation of indium increases with decreasing growth temperature, while the incorporation of Al composition was 30–40 %. The optical properties of the samples have been investigated by photoluminescence (PL). The results show that the sample grown at 890 °C exhibits the best crystalline and optical quality." @default.
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- W2292593001 date "2014-01-01" @default.
- W2292593001 modified "2023-09-27" @default.
- W2292593001 title "Growth and Characterization of AlInGaN/AlN/GaN Grown by MOCVD" @default.
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- W2292593001 doi "https://doi.org/10.1007/978-3-319-03002-9_28" @default.
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