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• W2292620377 abstract "We go far beyond classical TCAD in and create a simulation framework that is ready for devices based on contemporary and future technology nodes. We do so by extending the common drift-diffusion-type device simulation framework with additional tools: (i) a k p-based subband structure tool, (ii) a deterministic subband Boltzmann transport solver, and (iii) a TCAD-compatible quantum transport solver, to capture every important aspect of device operation at the nano-scale. An atomistic ab-initio tool suite complements the framework providing material properties that would be hard to obtain otherwise. The capabilities of the approach are demonstrated on two different devices featuring non-planar geometry and alternative channel materials." @default.
• W2292620377 created "2016-06-24" @default.
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• W2292620377 date "2015-12-01" @default.
• W2292620377 modified "2023-09-23" @default.
• W2292620377 title "Physical modeling - A new paradigm in device simulation" @default.
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• W2292620377 doi "https://doi.org/10.1109/iedm.2015.7409631" @default.
• W2292620377 hasPublicationYear "2015" @default.
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