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• W2294189793 abstract "The presented compact model of SiC power MOSFETs is based on a thorough consideration of the physical phenomena which are important for the device characteristics and its electrothermal behavior. The model includes descriptions of the dependence of channel charge and electron mobility on the charge of interface traps and a simple but effective calculation of the voltage-dependent drain resistance. Comparisons with both physical 2-D device simulations and experiments validate the correctness of the modeling approach and the accuracy of the results." @default.
• W2294189793 created "2016-06-24" @default.
• W2294189793 creator A5008520282 @default.
• W2294189793 creator A5056248361 @default.
• W2294189793 date "2016-08-01" @default.
• W2294189793 modified "2023-10-14" @default.
• W2294189793 title "A Physics-Based Compact Model of SiC Power MOSFETs" @default.
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• W2294189793 doi "https://doi.org/10.1109/tpel.2015.2488106" @default.
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