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- W2294272341 abstract "Mn-doped Si has attracted significant interest in the context of dilute magnetic semiconductors. We investigated the lattice location of implanted Mn in silicon of different doping types (n, $$n^+$$ and $$p^+$$ ) in the highly dilute regime. Three different lattice sites were identified by means of emission channeling experiments: ideal substitutional sites; sites displaced from bond-centered toward substitutional sites; and sites displaced from anti-bonding toward tetrahedral interstitial sites. For all doping types investigated, the substitutional fraction remained below $$sim$$ 30 %. We discuss the origin of the observed lattice sites as well as the implications of such structures on the understanding of Mn-doped Si systems." @default.
- W2294272341 created "2016-06-24" @default.
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- W2294272341 date "2016-03-01" @default.
- W2294272341 modified "2023-09-25" @default.
- W2294272341 title "Direct observation of the lattice sites of implanted manganese in silicon" @default.
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- W2294272341 doi "https://doi.org/10.1007/s00339-016-9724-4" @default.
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