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- W2296000770 abstract "The growth of Pb on $mathrm{Si}(111)text{ensuremath{-}}(7ifmmodetimeselsetexttimesfi{}7)$ at temperatures from 72 to 201 K has been investigated using in situ electrical resistivity measurements and scanning tunneling microscopy. For temperatures $T>140text{ }text{ }mathrm{K}$ the specific resistivity $ensuremath{rho}(ensuremath{theta})$ versus coverage $ensuremath{theta}$ shows an unusual ``hump,'' instead of the expected monotonic decrease with $ensuremath{theta}$. This novel result correlates well with the formation of uniform height eight-layer Pb islands and the superdiffusive motion of the wetting layer, despite the low temperatures. A model of the film resistivity as two resistors in series, the amorphous wetting layer and the crystalline islands, explains quantitatively the resistivity dependence on $ensuremath{theta}$." @default.
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- W2296000770 date "2016-02-23" @default.
- W2296000770 modified "2023-09-26" @default.
- W2296000770 title "Correlations betweenIn SituConductivity and Uniform-Height Epitaxial Morphology inPb/Si(111)−(7×7)" @default.
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- W2296000770 doi "https://doi.org/10.1103/physrevlett.116.086101" @default.
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