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• W2296227989 abstract "Field‐effect transistor memories usually require one additional charge storage layer between the gate contact and organic semiconductor channel. To avoid such complication, new donor–acceptor rod–coil diblock copolymers (P3HT 44 ‐ b ‐Piso n ) of poly(3‐hexylthiophene) (P3HT)‐ block ‐poly(pendent isoindigo) (Piso) are designed, which exhibit high performance transistor memory characteristics without additional charge storage layer. The P3HT and Piso blocks are acted as the charge transporting and storage elements, respectively. The prepared P3HT 44 ‐ b ‐Piso n can be self‐assembled into fibrillar‐like nanostructures after the thermal annealing process, confirmed by atomic force microscopy and grazing‐incidence X‐ray diffraction. The lowest‐unoccupied molecular orbital levels of the studied polymers are significantly lowered as the block length of Piso increases, leading to a stronger electron affinity as well as charge storage capability. The field‐effect transistors (FETs) fabricated from P3HT 44 ‐ b ‐Piso n possess p‐type mobilities up to 4.56 × 10 −2 cm 2 V −1 s −1 , similar to that of the regioregular P3HT. More interestingly, the FET memory devices fabricated from P3HT 44 ‐ b ‐Piso n exhibit a memory window ranging from 26 to 79 V by manipulating the block length of Piso, and showed stable long‐term data endurance. The results suggest that the FET characteristics and data storage capability can be effectively tuned simultaneously through donor/acceptor ratio and thin film morphology in the block copolymer system." @default.
• W2296227989 created "2016-06-24" @default.
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• W2296227989 date "2016-03-08" @default.
• W2296227989 modified "2023-10-16" @default.
• W2296227989 title "Donor-Acceptor Poly(3-hexylthiophene)-<i>block</i>-Pendent Poly(isoindigo) with Dual Roles of Charge Transporting and Storage Layer for High-Performance Transistor-Type Memory Applications" @default.
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• W2296227989 doi "https://doi.org/10.1002/adfm.201504957" @default.
• W2296227989 hasPublicationYear "2016" @default.
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