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• W2296397641 endingPage "7283" @default.
• W2296397641 startingPage "7277" @default.
• W2296397641 abstract "AlxGa1–xN alloys, covering the entire compositional range (0 ≤ x ≤ 1), were implanted at room temperature with 200 keV argon (Ar) ions to fluences ranging from 1 × 1013 to 2 × 1016 Ar/cm2. The damage formation mechanisms and radiation resistance of AlxGa1–xN alloys were investigated combining in situ Rutherford backscattering spectrometry/channeling (RBS/C) and ex situ X-ray diffraction (XRD) in order to assess the damage profiles and the elastic response of the material to radiation. For all compounds, damage buildup proceeds in four stages revealing a saturation of the defect level for high fluences without any sign of amorphization. Surprisingly, in this high fluence regime, RBS/C reveals higher defect levels in samples with high AlN concentrations in contrast to the common believe that AlN is more radiation resistant than GaN. A model is proposed ascribing this behavior to a lower defect recombination cross section at room temperature combined with the formation of stable extended defects. The processes are probably dependent on the collision cascade density, that is, the mass of the implanted ions. XRD shows that implantation leads to the incorporation of large lattice strain in the implanted layer which increases with increasing fluence. Above a threshold fluence, an abrupt change of the elastic properties of the crystals is observed and strain saturates in the entire implanted region. This threshold fluence is reached earlier for GaN than for AlxGa1–xN alloys with x > 0." @default.
• W2296397641 created "2016-06-24" @default.
• W2296397641 creator A5004517770 @default.
• W2296397641 creator A5025923344 @default.
• W2296397641 creator A5027474074 @default.
• W2296397641 creator A5032305648 @default.
• W2296397641 creator A5046052959 @default.
• W2296397641 creator A5053085772 @default.
• W2296397641 creator A5063461797 @default.
• W2296397641 creator A5066677047 @default.
• W2296397641 date "2016-03-29" @default.
• W2296397641 modified "2023-10-18" @default.
• W2296397641 title "Mechanisms of Implantation Damage Formation in Al_<i>x</i>Ga_1–<i>x</i>N Compounds" @default.
• W2296397641 cites W1675399623 @default.
• W2296397641 cites W1967274321 @default.
• W2296397641 cites W1973421563 @default.
• W2296397641 cites W1976503452 @default.
• W2296397641 cites W1983528429 @default.
• W2296397641 cites W1985399871 @default.
• W2296397641 cites W1986980639 @default.
• W2296397641 cites W1989833511 @default.
• W2296397641 cites W1991001516 @default.
• W2296397641 cites W1995687741 @default.
• W2296397641 cites W1998437016 @default.
• W2296397641 cites W2002822879 @default.
• W2296397641 cites W2009341083 @default.
• W2296397641 cites W2020143503 @default.
• W2296397641 cites W2022097989 @default.
• W2296397641 cites W2025262678 @default.
• W2296397641 cites W2028119699 @default.
• W2296397641 cites W2029657689 @default.
• W2296397641 cites W2029984698 @default.
• W2296397641 cites W2030662742 @default.
• W2296397641 cites W2042642127 @default.
• W2296397641 cites W2042773614 @default.
• W2296397641 cites W2044367563 @default.
• W2296397641 cites W2045052520 @default.
• W2296397641 cites W2045345515 @default.
• W2296397641 cites W2045441431 @default.
• W2296397641 cites W2045857998 @default.
• W2296397641 cites W2051958619 @default.
• W2296397641 cites W2056658158 @default.
• W2296397641 cites W2058592287 @default.
• W2296397641 cites W2060531520 @default.
• W2296397641 cites W2072854446 @default.
• W2296397641 cites W2081405082 @default.
• W2296397641 cites W2082610222 @default.
• W2296397641 cites W2089263315 @default.
• W2296397641 cites W2102838580 @default.
• W2296397641 cites W2111036204 @default.
• W2296397641 cites W2131789983 @default.
• W2296397641 cites W2164299968 @default.
• W2296397641 cites W2303298542 @default.
• W2296397641 cites W4253056353 @default.
• W2296397641 cites W4301456181 @default.
• W2296397641 cites W52219456 @default.
• W2296397641 cites W646050962 @default.
• W2296397641 doi "https://doi.org/10.1021/acs.jpcc.6b00133" @default.
• W2296397641 hasPublicationYear "2016" @default.
• W2296397641 type Work @default.
• W2296397641 sameAs 2296397641 @default.
• W2296397641 citedByCount "33" @default.
• W2296397641 countsByYear W22963976412016 @default.
• W2296397641 countsByYear W22963976412017 @default.
• W2296397641 countsByYear W22963976412018 @default.
• W2296397641 countsByYear W22963976412019 @default.
• W2296397641 countsByYear W22963976412020 @default.
• W2296397641 countsByYear W22963976412021 @default.
• W2296397641 countsByYear W22963976412022 @default.
• W2296397641 countsByYear W22963976412023 @default.
• W2296397641 crossrefType "journal-article" @default.
• W2296397641 hasAuthorship W2296397641A5004517770 @default.
• W2296397641 hasAuthorship W2296397641A5025923344 @default.
• W2296397641 hasAuthorship W2296397641A5027474074 @default.
• W2296397641 hasAuthorship W2296397641A5032305648 @default.
• W2296397641 hasAuthorship W2296397641A5046052959 @default.
• W2296397641 hasAuthorship W2296397641A5053085772 @default.
• W2296397641 hasAuthorship W2296397641A5063461797 @default.
• W2296397641 hasAuthorship W2296397641A5066677047 @default.
• W2296397641 hasConcept C111337013 @default.
• W2296397641 hasConcept C113196181 @default.
• W2296397641 hasConcept C114614502 @default.
• W2296397641 hasConcept C120665830 @default.
• W2296397641 hasConcept C121332964 @default.
• W2296397641 hasConcept C145148216 @default.
• W2296397641 hasConcept C153428861 @default.
• W2296397641 hasConcept C164675345 @default.
• W2296397641 hasConcept C171250308 @default.
• W2296397641 hasConcept C178790620 @default.
• W2296397641 hasConcept C184779094 @default.
• W2296397641 hasConcept C185544564 @default.
• W2296397641 hasConcept C185592680 @default.
• W2296397641 hasConcept C19067145 @default.
• W2296397641 hasConcept C192562407 @default.
• W2296397641 hasConcept C207114421 @default.
• W2296397641 hasConcept C22078206 @default.
• W2296397641 hasConcept C2780547777 @default.
• W2296397641 hasConcept C33923547 @default.

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