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- W2297776369 abstract "To overcome the prohibitive barriers of edge-placement errors (EPE) in the cut/block/via step of complementary lithography, we propose a modular patterning approach by combining layout stitching, selective etching, and alternating-material self-aligned multiple patterning (altSAMP) processes. In this patterning approach, altSAMP is used to create line arrays with two materials alternatively which allow a highly selective etching process to remove one material without attacking the other, therefore more significant EPE effect can be tolerated in line-cutting step. With no need of connecting vias, the stitching process can form 2-D features by directly stitching two components of patterns together to create 2-D design freedom as well as multiple-CD/pitch capability. By adopting this novel approach, we can potentially achieve higher processing yield and more 2-D design freedom for continuous IC scaling down to 5 nm. We developed layout decomposition and synthesis algorithms for critical layers, and the fin/gate/metal layer from NSCU open cell library is used to test the proposed algorithms." @default.
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- W2297776369 date "2016-03-16" @default.
- W2297776369 modified "2023-09-23" @default.
- W2297776369 title "Layout decomposition and synthesis for a modular technology to solve the edge-placement challenges by combining selective etching, direct stitching, and alternating-material self-aligned multiple patterning processes" @default.
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- W2297776369 doi "https://doi.org/10.1117/12.2219082" @default.
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