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• W2297944321 startingPage "045202" @default.
• W2297944321 abstract "Abstract The electrical property of thin-layer black phosphorus (BP) was explored using a simple dry transfer method, which greatly reduced the fabrication time to carry out electrical measurement starting from an initial state with little degradation. As a result, the as-prepared BP field-effect transistor (FET) exhibited a high on/off ratio exceeding 10 4 and a high hole mobility of 380 cm 2 /(V·s). The time-dependent electrical property of BP indicated a declining and recovering process, caused by the degradation and doping effect. Finally, it was demonstrated that the degradation and large hysteresis of BP FET could be modified by covering a thin Al 2 O 3 layer." @default.
• W2297944321 created "2016-06-24" @default.
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• W2297944321 date "2016-03-10" @default.
• W2297944321 modified "2023-09-26" @default.
• W2297944321 title "In situ observation of electrical property of thin-layer black phosphorus based on dry transfer method" @default.
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• W2297944321 doi "https://doi.org/10.7567/apex.9.045202" @default.
• W2297944321 hasPublicationYear "2016" @default.
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