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- W2298116427 abstract "Abstract – We have proposed the novel etching technology of Pt using a hard mask in reactive ion etching plasmas. By the insertion of a Ti mask layer and increasing the wafer temperature in O2 plasma by a dual frequency reactive ion etcher (RIE), we have obtained a higher Pt etching slope. This result not only enlightens the next generation of DRAM and FRAM technology, but also develops the basic technology of patterning inert materials." @default.
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- W2298116427 date "2004-01-01" @default.
- W2298116427 modified "2023-09-24" @default.
- W2298116427 title "A NOVEL APPROACH TO THE PLATINUM ELECTRODEETCHING FOR DRAM APPLICATIONS" @default.
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