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• W2298127724 abstract "The dry etching of GaN to form deep vertical structures is a critical step in many power device processes. To accomplish this, a chlorine and argon etch is investigated in detail to satisfy several criteria simultaneously such as surface roughness, crystal damage, and etch angle. Etch depths from 2 to 3.4 μm are shown in this paper. The authors investigate the formation of etch pits and its contributing factors. In addition, a nickel hard mask process is presented, with an investigation into the causes of micromasking and a pre-etch to prevent it. The authors show the results of optimized etch conditions resulting in a 2 μm deep, 0.831 nm rms roughness etch, with a 7.6° angle from vertical and low surface damage as measured by photoluminescence." @default.
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• W2298127724 date "2016-03-15" @default.
• W2298127724 modified "2023-09-27" @default.
• W2298127724 title "Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness" @default.
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• W2298127724 doi "https://doi.org/10.1116/1.4944054" @default.
• W2298127724 hasPublicationYear "2016" @default.
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