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• W2300350400 abstract "Abstract InGaN/GaN self-organized quantum dots can provide useful advantages over quantum wells for the realization of long-wavelength visible light sources because the dots are formed by strain relaxation. A III–nitride based laser emitting in the red (λ ∼ 630 nm), which has not been demonstrated with quantum wells, would be useful for a host of applications. We have investigated the epitaxy and characteristics of self-organized InGaN/GaN multiple layer quantum dots grown by plasma-assisted molecular beam epitaxy and have optimized their properties by tuning the growth parameters. Red-emitting (λ ∼ 630 nm) quantum dots have radiative lifetime ∼2.5 ns and internal quantum efficiency greater than 50%. Edge-emitting red-lasers with multi-dot layers in the active region exhibit an extremely low threshold current density of 1.6 kA/cm 2 , a high temperature coefficient T 0 = 240 K, and a large differential gain dg / dn = 9 × 10 −17 cm 2 ." @default.
• W2300350400 created "2016-06-24" @default.
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• W2300350400 date "2016-02-05" @default.
• W2300350400 modified "2023-10-03" @default.
• W2300350400 title "High performance red-emitting multiple layer InGaN/GaN quantum dot lasers" @default.
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• W2300350400 doi "https://doi.org/10.7567/jjap.55.032101" @default.
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