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- W2300923936 abstract "As the semiconductor industry strives to keep pace with Moore’s Law, new materials with extreme properties are increasingly being introduced and tighter control of these material properties is being demanded. Low dielectric constant (i.e. low-k) materials are one specific example. Lower k materials are desired to replace SiO2 (k=4.0) as the interlayer dielectric (ILD) and SiNx:H (k = 7.0) as the Cu capping diffusion barrier layer in order to reduce resistance-capacitance (RC) delays in nanoelectronic Cu interconnect structures. Typical methods for producing low-k materials consist of introducing controlled levels of nano-porosity via carbon doping during plasma enhanced chemical vapor deposition (PECVD) of SiO2 and SiNx:H matrix materials. While lowering k, the introduction of nano-porosity reduces the mechanical properties and can seriously compromise the performance of these materials. The introduction of nanoporosity also allows for the rapid diffusion of ambient moisture, wet chemicals, Cu, and other elements through these materials both during processing and in operation. This can lead to further reductions in mechanical properties (moisture assisted cracking) and compromised electrical reliability. Thus, there is a need for a fundamental understanding of the relation between PECVD process parameters, nano-porosity, and resulting material properties." @default.
- W2300923936 created "2016-06-24" @default.
- W2300923936 date "2012-01-01" @default.
- W2300923936 modified "2023-10-17" @default.
- W2300923936 title "Control of Nano-Porosity in Plasma Enhanced Chemical Vapor Deposition of low-k a-SiC:H Dielectrics" @default.
- W2300923936 doi "https://doi.org/10.1149/ma2012-01/21/902" @default.
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