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- W2301016716 abstract "To adopt a galvanic based Nickel seed layer front side metallization on an industrial manufacturing cell concept several process steps had to be optimized related to plating. In this work relevant process steps have been investigated with regard to their potential impact for galvanic based front side metallization. Starting with an industrial standard process scheme for solar cells the not feasible processes are determined and alternatives will be presented. The investigated impacts are the emitter formation the plasma enhanced chemical vapor deposition SiNx anti-reflection coating (ARC) opening and the thermal contact formation [1]. A revised process scheme, involving an adopt emitter profile based on a inline furnace emitter [2] and an SiNx ARC laser ablation, is introduced and first solar cell results with 18.4 % efficiencies are achieved with a fully plated, nickel based, front side metallization." @default.
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- W2301016716 date "2012-10-26" @default.
- W2301016716 modified "2023-09-23" @default.
- W2301016716 title "Demands for Processing of Industrial Silicon Solar Cells with Galvanic Based Nickel Seed Layer as Front Side Metallization" @default.
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- W2301016716 doi "https://doi.org/10.4229/27theupvsec2012-2cv.5.42" @default.
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