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- W2301384085 abstract "The solid solutions of CsBi4Te6, a high ZT material at a low temperature region, with Sb and Se were synthesized with general formulas CsBi4-xSbxTe6 and CsBi4Te6-ySey. The introduction of Sb and Se in the lattice of CsBi4Te6 is possible but only to a limited extent. The Sb and Se atoms substituted are not uniformly distributed over all crystallographic sites but display particular site preferences. The structure of new Sb/Bi solid solutions retains the original framework of CsBi4Te6 composed of NaCl-type Bi/Te slabs interconnected by characteristic Bi–Bi bonds and Cs atoms located in the interlayer space. A structurally modified phase in Se/Te solid solutions was found from the reactions targeted for 0.2 < y < 2.4 with the formula of CsBi5Te7.5-ySey (or Cs2Bi10Q15, (Q = Se, Te)). The new structure is constructed by the same structural motif with an extended Bi/Te slab (29 Å) compared to that in CsBi4Te6 (23 Å). The CsBi5Te7.5-ySey possesses Bi/Te slabs that extend by an additional “Bi2Te3” unit compared to the structure of CsBi4Te6, which implies the existence of a phase homology of compounds with the adjustable parameter being the width of the Bi/Q slab. In the reactions targeted for the compounds with higher y, a new phase CsBi5Te3.6Se4.4 with a different type of framework was found. The electrical conductivity and thermopower for the selected samples show p-type conduction with metallic behavior. The room temperature values measured are in the range of 300–1100 S/cm and 100–150 μV/K for Sb-substituted samples and 20–500 S/cm and 70–140 μV/K for Se-substituted samples, respectively. Thermal conductivities of these samples are in the range of 0.9–1.2 W/m·K at room temperature. Tailoring the transport behavior of these materials for thermoelectric applications may be achieved by doping, as is possible for the parent compound CsBi4Te6." @default.
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- W2301384085 date "2012-05-11" @default.
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- W2301384085 title "Sb and Se Substitution in CsBi<sub>4</sub>Te<sub>6</sub>: The Semiconductors CsM<sub>4</sub>Q<sub>6</sub> (M = Bi, Sb; Q = Te, Se), Cs<sub>2</sub>Bi<sub>10</sub>Q<sub>15</sub>, and CsBi<sub>5</sub>Q<sub>8</sub>" @default.
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- W2301384085 doi "https://doi.org/10.1021/cm300490v" @default.
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