FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2302020419> ?p ?o ?g. }

• W2302020419 endingPage "04ER06" @default.
• W2302020419 startingPage "04ER06" @default.
• W2302020419 abstract "Abstract In this paper, we present a newly developed 1200-V-class 4H-SiC implantation-and-epitaxial trench metal–oxide–semiconductor field-effect transistor (IETMOSFET). It uses high-quality p- and n-epitaxial layers for a channel and a trench current spreading layer (TCSL), respectively. It can enhance both channel mobility and bulk mobility for current spreading by avoiding damage and impurity variations caused by ion implantation. The ion implantation and epitaxial techniques developed for existing ion-implantation-and-epitaxial MOSFETs (IEMOSFETs) are herein utilized to protect the trench bottom and a relatively low-doped epitaxial channel layer with high mobility. By optimizing the geometry of p-base regions under a gate trench structure, we obtain a low specific on-resistance ( R ON A ) of 1.8 mΩ cm 2 with a breakdown voltage (BV DSS ) above 1200 V." @default.
• W2302020419 created "2016-06-24" @default.
• W2302020419 creator A5016098069 @default.
• W2302020419 creator A5025113440 @default.
• W2302020419 creator A5033330973 @default.
• W2302020419 creator A5053726817 @default.
• W2302020419 date "2016-02-29" @default.
• W2302020419 modified "2023-09-25" @default.
• W2302020419 title "Development of a novel 1200-V-class 4H-SiC implantation-and-epitaxial trench MOSFET with low on-resistance" @default.
• W2302020419 cites W1552708910 @default.
• W2302020419 cites W1610190551 @default.
• W2302020419 cites W1964535485 @default.
• W2302020419 cites W1965040370 @default.
• W2302020419 cites W1974500658 @default.
• W2302020419 cites W1987652982 @default.
• W2302020419 cites W1995739820 @default.
• W2302020419 cites W2004451215 @default.
• W2302020419 cites W2005755955 @default.
• W2302020419 cites W2008389897 @default.
• W2302020419 cites W2029559905 @default.
• W2302020419 cites W2030513510 @default.
• W2302020419 cites W2034670541 @default.
• W2302020419 cites W2044554532 @default.
• W2302020419 cites W2061832999 @default.
• W2302020419 cites W2062940747 @default.
• W2302020419 cites W2066439780 @default.
• W2302020419 cites W2068205098 @default.
• W2302020419 cites W2069203894 @default.
• W2302020419 cites W2070402514 @default.
• W2302020419 cites W2071750707 @default.
• W2302020419 cites W2073867530 @default.
• W2302020419 cites W2076811599 @default.
• W2302020419 cites W2079615226 @default.
• W2302020419 cites W2085804909 @default.
• W2302020419 cites W2086023756 @default.
• W2302020419 cites W2092874501 @default.
• W2302020419 cites W2127078064 @default.
• W2302020419 cites W2142288572 @default.
• W2302020419 cites W2164642337 @default.
• W2302020419 cites W2165614715 @default.
• W2302020419 cites W2166652700 @default.
• W2302020419 cites W2241221235 @default.
• W2302020419 doi "https://doi.org/10.7567/jjap.55.04er06" @default.
• W2302020419 hasPublicationYear "2016" @default.
• W2302020419 type Work @default.
• W2302020419 sameAs 2302020419 @default.
• W2302020419 citedByCount "7" @default.
• W2302020419 countsByYear W23020204192016 @default.
• W2302020419 countsByYear W23020204192018 @default.
• W2302020419 countsByYear W23020204192019 @default.
• W2302020419 countsByYear W23020204192020 @default.
• W2302020419 countsByYear W23020204192022 @default.
• W2302020419 countsByYear W23020204192023 @default.
• W2302020419 crossrefType "journal-article" @default.
• W2302020419 hasAuthorship W2302020419A5016098069 @default.
• W2302020419 hasAuthorship W2302020419A5025113440 @default.
• W2302020419 hasAuthorship W2302020419A5033330973 @default.
• W2302020419 hasAuthorship W2302020419A5053726817 @default.
• W2302020419 hasConcept C110738630 @default.
• W2302020419 hasConcept C119599485 @default.
• W2302020419 hasConcept C127413603 @default.
• W2302020419 hasConcept C145148216 @default.
• W2302020419 hasConcept C155310634 @default.
• W2302020419 hasConcept C165801399 @default.
• W2302020419 hasConcept C171250308 @default.
• W2302020419 hasConcept C172385210 @default.
• W2302020419 hasConcept C178790620 @default.
• W2302020419 hasConcept C185592680 @default.
• W2302020419 hasConcept C192562407 @default.
• W2302020419 hasConcept C207521374 @default.
• W2302020419 hasConcept C2778413303 @default.
• W2302020419 hasConcept C2779227376 @default.
• W2302020419 hasConcept C41823505 @default.
• W2302020419 hasConcept C49040817 @default.
• W2302020419 hasConcept C57863236 @default.
• W2302020419 hasConceptScore W2302020419C110738630 @default.
• W2302020419 hasConceptScore W2302020419C119599485 @default.
• W2302020419 hasConceptScore W2302020419C127413603 @default.
• W2302020419 hasConceptScore W2302020419C145148216 @default.
• W2302020419 hasConceptScore W2302020419C155310634 @default.
• W2302020419 hasConceptScore W2302020419C165801399 @default.
• W2302020419 hasConceptScore W2302020419C171250308 @default.
• W2302020419 hasConceptScore W2302020419C172385210 @default.
• W2302020419 hasConceptScore W2302020419C178790620 @default.
• W2302020419 hasConceptScore W2302020419C185592680 @default.
• W2302020419 hasConceptScore W2302020419C192562407 @default.
• W2302020419 hasConceptScore W2302020419C207521374 @default.
• W2302020419 hasConceptScore W2302020419C2778413303 @default.
• W2302020419 hasConceptScore W2302020419C2779227376 @default.
• W2302020419 hasConceptScore W2302020419C41823505 @default.
• W2302020419 hasConceptScore W2302020419C49040817 @default.
• W2302020419 hasConceptScore W2302020419C57863236 @default.
• W2302020419 hasIssue "4S" @default.
• W2302020419 hasLocation W23020204191 @default.
• W2302020419 hasOpenAccess W2302020419 @default.
• W2302020419 hasPrimaryLocation W23020204191 @default.
• W2302020419 hasRelatedWork W1970947971 @default.
• W2302020419 hasRelatedWork W1981504582 @default.

• next