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• W2302959760 abstract "Random Telegraph Noise (RTN) has been studied in ultrathin SOI MOSFET by introducing a new protocol which aims to identify unequivocally the single-trap RTN signals in optimum bias conditions for its electrical characterization. The methodology combines a modified Weighted Time Lag Plot algorithm assisted with 1/ƒ spectral scanning by gate bias. The procedure has been applied to study the influence of the back-gate bias on the RTN characteristics of the SOI devices with coupled front and back interfaces, revealing unusual characteristics compatible with the trap escaping to the gate metal contact." @default.
• W2302959760 created "2016-06-24" @default.
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• W2302959760 date "2016-01-01" @default.
• W2302959760 modified "2023-09-27" @default.
• W2302959760 title "Electrical characterization of Random Telegraph Noise in back-biased Ultrathin Silicon-On-Insulator MOSFETs" @default.
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• W2302959760 doi "https://doi.org/10.1109/ulis.2016.7440047" @default.
• W2302959760 hasPublicationYear "2016" @default.
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