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- W2304472009 abstract "This paper presents the synthesis of single crystalline, self-catalytic β-Ga2O3 rods by a low pressure chemical vapor deposition technique. The effects of oxygen concentration and growth temperature on the morphology and growth rate of β-Ga2O3 rods were studied. The β-Ga2O3 rods were synthesized on a 3C-SiC film deposited on a silicon substrate utilizing high purity gallium (Ga) metal and oxygen (O2) as source materials, and argon (Ar) as a carrier gas. X-ray diffraction, high resolution transmission electron microscopy, and Raman spectroscopy measurements were performed for the as-grown β-Ga2O3 rods, which revealed a monoclinic phase of β-Ga2O3 with single crystalline microstructure. The selected area electron diffraction pattern recorded on a single β-Ga2O3 rod further verified their single crystalline nature. Because of their high crystalline quality and large surface area to volume ratio, these β-Ga2O3 rods have a great potential for surface related applications such as photocatalysis, chemical sensing, and deep-ultraviolet photodetection." @default.
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- W2304472009 date "2015-12-17" @default.
- W2304472009 modified "2023-09-25" @default.
- W2304472009 title "Synthesis of Wide Bandgap β-Ga<sub>2</sub>O<sub>3</sub> Rods on 3C-SiC-on-Si" @default.
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- W2304472009 doi "https://doi.org/10.1021/acs.cgd.5b01562" @default.
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