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• W2304612708 startingPage "65" @default.
• W2304612708 abstract "The current research of GaN nanowires on diamond substrates is reviewed and extended by recent results. Both the self-assembled and the selective area growth mechanisms using plasma-assisted molecular beam epitaxy are summarized. Structural and optical properties of as-grown nanowires as well as doping-related issues are discussed and compared to nanowires on silicon substrate. The electronic characteristics of p-diamond/n-GaN nanowire heterojunctions are addressed theoretically by band structure simulations and experimentally by transport measurements. Finally, electroluminescence of a fabricated prototype nanoLED device is demonstrated." @default.
• W2304612708 created "2016-06-24" @default.
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• W2304612708 date "2016-06-01" @default.
• W2304612708 modified "2023-09-25" @default.
• W2304612708 title "GaN nanowires on diamond" @default.
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• W2304612708 doi "https://doi.org/10.1016/j.mssp.2016.03.013" @default.
• W2304612708 hasPublicationYear "2016" @default.
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