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• W2304974856 abstract "In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al0.2Ga0.8N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes." @default.
• W2304974856 created "2016-06-24" @default.
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• W2304974856 date "2016-03-01" @default.
• W2304974856 modified "2023-10-15" @default.
• W2304974856 title "The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes" @default.
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• W2304974856 doi "https://doi.org/10.1063/1.4945015" @default.
• W2304974856 hasPublicationYear "2016" @default.
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