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• W230528029 abstract "A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed typical I-V characteristics. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode." @default.
• W230528029 created "2016-06-24" @default.
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• W230528029 date "2002-03-01" @default.
• W230528029 modified "2023-09-26" @default.
• W230528029 title "p-n Heterojunction Composed of n-ZnO/p-Zn-doped InP" @default.
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• W230528029 doi "https://doi.org/10.4313/teem.2002.3.1.001" @default.
• W230528029 hasPublicationYear "2002" @default.
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