FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2306623622> ?p ?o ?g. }

• W2306623622 abstract "The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. However, huge challenges are also encountered. Apart from the large parasitics associated with the device layout, vertical III-V/high-k nanowire MOSFETs so far are also suffering from a less efficient gate control partially due to the defect states existing in the MOS gate stack. Besides the narrow band gap InAs may result in impact-ionization and band-to-band tunneling at high drain voltages, influencing both the power efficiency and speed of modern integrated circuits (ICs). In this thesis, results on planar InAs/high-k MOS gate stacks investigated in detail using both the capacitance-voltage (C-V) and the x-ray photoelectron spectroscopy (XPS) techniques are first presented (Paper I and II). The origin of the specific trap state energy distribution is clarified and compared to the well studied InGaAs and GaAs materials. The results highlight the benefit of using InAs, with optimized high-k deposition strategies, as the n-MOSFET channel. The second focus of the thesis is the improvement of vertical GAA nanowire MOS gate stacks (Paper III and IV). By developing the fabrication scheme and design, conventional C-V technique is successfully applied to extract detailed trap state distributions. A low interface trap state density (Dit) below 10E12 eV-1cm-2 near the MOS semiconductor conduction band edge is achieved. Furthermore, RF C-V measurements, together with the development of a complete small signal equivalent circuit model, for vertical GAA nanowire MOS systems are also presented for the first time, which enables characterizations of border trap density, interface trap density, channel resistivity and quality factor of the nanowire MOSFETs simultaneously. The third focus is the development of a device structure to reduce detrimental impact-ionization and band-to-band tunneling due to the narrow band gap of InAs (Paper V and VI). An asymmetric InAs/InGaAs vertical nanowire MOSFET with a large band gap drain region is proposed, taking advantage of the efficient strain relaxation of nanowire epitaxial growth. Control of the InGaAs nanowire composition has been successfully demonstrated.Finally, a vertical integration scheme was developed in the thesis, where track-and-hold circuits, consisting of a MOSFET in series with a metal-insulator-metal capacitor, were successfully fabricated along vertical InAs nanowires (Paper VII)." @default.
• W2306623622 created "2016-06-24" @default.
• W2306623622 creator A5059707725 @default.
• W2306623622 date "2016-01-01" @default.
• W2306623622 modified "2023-09-25" @default.
• W2306623622 title "Vertical III-V/High-k Nanowire MOS Capacitors and Transistors" @default.
• W2306623622 hasPublicationYear "2016" @default.
• W2306623622 type Work @default.
• W2306623622 sameAs 2306623622 @default.
• W2306623622 citedByCount "0" @default.
• W2306623622 crossrefType "dissertation" @default.
• W2306623622 hasAuthorship W2306623622A5059707725 @default.
• W2306623622 hasConcept C119599485 @default.
• W2306623622 hasConcept C127413603 @default.
• W2306623622 hasConcept C165801399 @default.
• W2306623622 hasConcept C171250308 @default.
• W2306623622 hasConcept C172385210 @default.
• W2306623622 hasConcept C181966813 @default.
• W2306623622 hasConcept C192562407 @default.
• W2306623622 hasConcept C2778413303 @default.
• W2306623622 hasConcept C49040817 @default.
• W2306623622 hasConcept C61696701 @default.
• W2306623622 hasConcept C74214498 @default.
• W2306623622 hasConceptScore W2306623622C119599485 @default.
• W2306623622 hasConceptScore W2306623622C127413603 @default.
• W2306623622 hasConceptScore W2306623622C165801399 @default.
• W2306623622 hasConceptScore W2306623622C171250308 @default.
• W2306623622 hasConceptScore W2306623622C172385210 @default.
• W2306623622 hasConceptScore W2306623622C181966813 @default.
• W2306623622 hasConceptScore W2306623622C192562407 @default.
• W2306623622 hasConceptScore W2306623622C2778413303 @default.
• W2306623622 hasConceptScore W2306623622C49040817 @default.
• W2306623622 hasConceptScore W2306623622C61696701 @default.
• W2306623622 hasConceptScore W2306623622C74214498 @default.
• W2306623622 hasLocation W23066236221 @default.
• W2306623622 hasOpenAccess W2306623622 @default.
• W2306623622 hasPrimaryLocation W23066236221 @default.
• W2306623622 hasRelatedWork W1566086077 @default.
• W2306623622 hasRelatedWork W1985554156 @default.
• W2306623622 hasRelatedWork W1997895812 @default.
• W2306623622 hasRelatedWork W2025148542 @default.
• W2306623622 hasRelatedWork W2026832987 @default.
• W2306623622 hasRelatedWork W2073515884 @default.
• W2306623622 hasRelatedWork W2098400717 @default.
• W2306623622 hasRelatedWork W2118719286 @default.
• W2306623622 hasRelatedWork W2175488934 @default.
• W2306623622 hasRelatedWork W2322249048 @default.
• W2306623622 hasRelatedWork W2396184561 @default.
• W2306623622 hasRelatedWork W2503578271 @default.
• W2306623622 hasRelatedWork W2542654366 @default.
• W2306623622 hasRelatedWork W2548694001 @default.
• W2306623622 hasRelatedWork W2743483509 @default.
• W2306623622 hasRelatedWork W2745475632 @default.
• W2306623622 hasRelatedWork W2802760678 @default.
• W2306623622 hasRelatedWork W2885931221 @default.
• W2306623622 hasRelatedWork W2905558462 @default.
• W2306623622 hasRelatedWork W2536566644 @default.
• W2306623622 isParatext "false" @default.
• W2306623622 isRetracted "false" @default.
• W2306623622 magId "2306623622" @default.
• W2306623622 workType "dissertation" @default.