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- W2308444736 abstract "In this work we present the results of a combined experimental and theoretical investigation into the capacitance-voltage characteristics of the high-k/In0.53Ga0.47As/InP system. The emphasis of the work is placed on the maximum measured and theoretical capacitance for n and p doped In0.53Ga0.47As epitaxial layers. Theoretical calculations based on ideal systems indicate a highly asymmetric CV response, with an equivalent oxide thickness correction ~ 1.4nm (Γ valley only) and ~ 0.23nm for the high-k/n-In0.53Ga0.47As/InP and high-k/p-In0.53Ga0.47As/InP systems respectively. The theoretical calculations are compared to experimental results for Al2O3 /In0.53Ga0.47As/InP MOS structures, and discrepancies are discussed." @default.
- W2308444736 created "2016-06-24" @default.
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- W2308444736 date "2010-10-01" @default.
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- W2308444736 title "(Invited) Equivalent Oxide Thickness Correction in the High-k/In0.53Ga0.47As/InP System" @default.
- W2308444736 doi "https://doi.org/10.1149/1.3481632" @default.
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