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- W2308484736 abstract "The concentration of shallow defect states in Ta 2 O 5 films was found to be greatly reduced, resulting in much less leakage current in Al/Ta 2 O 5 /Si capacitors, if N 2 O was used instead of O 2 for post-deposition annealing. The superiority of N 2 O is explained by the formation of a slightly thicker SiO x diffusion barrier, which can reduce Si contamination coming from the Si substrate into the Ta 2 O 5 film." @default.
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- W2308484736 date "1996-05-01" @default.
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- W2308484736 title "A Comparison of Defect States in Tantalum Pentoxide (Ta<sub>2</sub>O<sub>5</sub>) Films after Rapid Thermal Annealing in O<sub>2</sub> or N<sub>2</sub>O by Zero-Bias Thermally Stimulated Current Spectroscopy" @default.
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- W2308484736 doi "https://doi.org/10.1143/jjap.35.2599" @default.
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