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- W2309165173 abstract "In this work, we present an analysis of Si samples realised by hot pressing of micro sized silicon powders supplied by different laboratories and industrial suppliers. Using optimized conditions, a doped polycrystalline material is obtained with a high purity and a density higher than 90%; however at this stage, the material microstructure shows grains limited to a few microns. Therefore, the wafers were recrystallized by ZMR leading to a molten zone on both sides of the wafer which extends across the whole thickness of the wafer. By this way, large grains in the centimetre range are obtained along the pulling direction. The semiconductor material was then characterized using electronic and optical microscopy; large regions of the material were found with a very low dislocation density. Impurity and doping contents were determined by GDMS. FTIR was used to measure oxygen and carbon concentration; resistivity, mobility, carrier densities and lifetimes were also measured. The wafers showed excellent majority carrier mobility around 200 cm 2 .V -1 .s -1 ; a good cristallinity within the grains and a doping concentration in the 10 16 to 10 17 cm -3 range. Metallic contamination was in the ppm range. The 8,9% cell efficiency obtained, using standard PN junction, is very promising." @default.
- W2309165173 created "2016-06-24" @default.
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- W2309165173 date "2009-11-18" @default.
- W2309165173 modified "2023-09-27" @default.
- W2309165173 title "Multicrystalline Silicon wafers prepared by sintering of silicon bed powders and re-crystallization using ZMR" @default.
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- W2309165173 doi "https://doi.org/10.4229/24theupvsec2009-2cv.5.39" @default.
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