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- W2312538881 abstract "An experimental and simulation study of short-channel planar bulk nMOSFET performance enhancement achieved with oxygen insertion technology is presented. The benefits of this technology for low-power digital logic circuits make it a promising evolutionary approach to extend bulk MOSFET scaling." @default.
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- W2312538881 date "2014-09-01" @default.
- W2312538881 modified "2023-09-25" @default.
- W2312538881 title "Extension of Planar Bulk n-Channel MOSFET Scaling With Oxygen Insertion Technology" @default.
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- W2312538881 doi "https://doi.org/10.1109/ted.2014.2342496" @default.
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