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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2313113808> ?p ?o ?g. }

• W2313113808 endingPage "3004" @default.
• W2313113808 startingPage "2997" @default.
• W2313113808 abstract "This paper investigates the effects of high dose rate ionizing radiation and total ionizing dose (TID) on tantalum oxide ( TaO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> ) memristors. Transient data were obtained during the pulsed exposures for dose rates ranging from approximately 5.0 ×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>7</sup> rad(Si)/s to 4.7 ×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>8</sup> rad(Si)/s and for pulse widths ranging from 50 ns to 50 μs. The cumulative dose in these tests did not appear to impact the observed dose rate response. Static dose rate upset tests were also performed at a dose rate of ~ 3.0 ×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>8</sup> rad(Si)/s. This is the first dose rate study on any type of memristive memory technology. In addition to assessing the tolerance of TaO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> memristors to high dose rate ionizing radiation, we also evaluated their susceptibility to TID. The data indicate that it is possible for the devices to switch from a high resistance off-state to a low resistance on-state in both dose rate and TID environments. The observed radiation-induced switching is dependent on the irradiation conditions and bias configuration. Furthermore, the dose rate or ionizing dose level at which a device switches resistance states varies from device to device; the enhanced susceptibility observed in some devices is still under investigation. Numerical simulations are used to qualitatively capture the observed transient radiation response and provide insight into the physics of the induced current/voltages." @default.
• W2313113808 created "2016-06-24" @default.
• W2313113808 creator A5000376979 @default.
• W2313113808 creator A5002225353 @default.
• W2313113808 creator A5007085207 @default.
• W2313113808 creator A5010408777 @default.
• W2313113808 creator A5013011968 @default.
• W2313113808 creator A5017426058 @default.
• W2313113808 creator A5052999905 @default.
• W2313113808 creator A5060869615 @default.
• W2313113808 date "2014-12-01" @default.
• W2313113808 modified "2023-09-26" @default.
• W2313113808 title "The Susceptibility of <formula formulatype=inline> <tex Notation=TeX>${hbox {TaO}}_{rm x}$</tex></formula>-Based Memristors to High Dose Rate Ionizing Radiation and Total Ionizing Dose" @default.
• W2313113808 cites W1512511821 @default.
• W2313113808 cites W1970411337 @default.
• W2313113808 cites W1981301644 @default.
• W2313113808 cites W1986928224 @default.
• W2313113808 cites W1995363833 @default.
• W2313113808 cites W1998684230 @default.
• W2313113808 cites W1999871211 @default.
• W2313113808 cites W2006798699 @default.
• W2313113808 cites W2009858207 @default.
• W2313113808 cites W2014359364 @default.
• W2313113808 cites W2015960619 @default.
• W2313113808 cites W2018774711 @default.
• W2313113808 cites W2024283366 @default.
• W2313113808 cites W2033811947 @default.
• W2313113808 cites W2036899386 @default.
• W2313113808 cites W2069418413 @default.
• W2313113808 cites W2074357625 @default.
• W2313113808 cites W2078970185 @default.
• W2313113808 cites W2079965219 @default.
• W2313113808 cites W2098906411 @default.
• W2313113808 cites W2106941131 @default.
• W2313113808 cites W2121141357 @default.
• W2313113808 cites W2124306283 @default.
• W2313113808 cites W2124843111 @default.
• W2313113808 cites W2140142016 @default.
• W2313113808 cites W2149380925 @default.
• W2313113808 cites W2490765418 @default.
• W2313113808 doi "https://doi.org/10.1109/tns.2014.2364521" @default.
• W2313113808 hasPublicationYear "2014" @default.
• W2313113808 type Work @default.
• W2313113808 sameAs 2313113808 @default.
• W2313113808 citedByCount "13" @default.
• W2313113808 countsByYear W23131138082015 @default.
• W2313113808 countsByYear W23131138082017 @default.
• W2313113808 countsByYear W23131138082018 @default.
• W2313113808 countsByYear W23131138082019 @default.
• W2313113808 countsByYear W23131138082020 @default.
• W2313113808 countsByYear W23131138082021 @default.
• W2313113808 crossrefType "journal-article" @default.
• W2313113808 hasAuthorship W2313113808A5000376979 @default.
• W2313113808 hasAuthorship W2313113808A5002225353 @default.
• W2313113808 hasAuthorship W2313113808A5007085207 @default.
• W2313113808 hasAuthorship W2313113808A5010408777 @default.
• W2313113808 hasAuthorship W2313113808A5013011968 @default.
• W2313113808 hasAuthorship W2313113808A5017426058 @default.
• W2313113808 hasAuthorship W2313113808A5052999905 @default.
• W2313113808 hasAuthorship W2313113808A5060869615 @default.
• W2313113808 hasConcept C111337013 @default.
• W2313113808 hasConcept C113196181 @default.
• W2313113808 hasConcept C121332964 @default.
• W2313113808 hasConcept C178790620 @default.
• W2313113808 hasConcept C18231593 @default.
• W2313113808 hasConcept C185544564 @default.
• W2313113808 hasConcept C185592680 @default.
• W2313113808 hasConcept C19527891 @default.
• W2313113808 hasConcept C3017588741 @default.
• W2313113808 hasConceptScore W2313113808C111337013 @default.
• W2313113808 hasConceptScore W2313113808C113196181 @default.
• W2313113808 hasConceptScore W2313113808C121332964 @default.
• W2313113808 hasConceptScore W2313113808C178790620 @default.
• W2313113808 hasConceptScore W2313113808C18231593 @default.
• W2313113808 hasConceptScore W2313113808C185544564 @default.
• W2313113808 hasConceptScore W2313113808C185592680 @default.
• W2313113808 hasConceptScore W2313113808C19527891 @default.
• W2313113808 hasConceptScore W2313113808C3017588741 @default.
• W2313113808 hasIssue "6" @default.
• W2313113808 hasLocation W23131138081 @default.
• W2313113808 hasLocation W23131138082 @default.
• W2313113808 hasOpenAccess W2313113808 @default.
• W2313113808 hasPrimaryLocation W23131138081 @default.
• W2313113808 hasRelatedWork W2045413987 @default.
• W2313113808 hasRelatedWork W2056474713 @default.
• W2313113808 hasRelatedWork W2058803697 @default.
• W2313113808 hasRelatedWork W2072955121 @default.
• W2313113808 hasRelatedWork W2112829401 @default.
• W2313113808 hasRelatedWork W2380268587 @default.
• W2313113808 hasRelatedWork W2433028819 @default.
• W2313113808 hasRelatedWork W2606557054 @default.
• W2313113808 hasRelatedWork W2967921404 @default.
• W2313113808 hasRelatedWork W4312636437 @default.
• W2313113808 hasVolume "61" @default.
• W2313113808 isParatext "false" @default.
• W2313113808 isRetracted "false" @default.
• W2313113808 magId "2313113808" @default.
• W2313113808 workType "article" @default.