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- W2313139048 abstract "The form of the solubility curves for VPE and LPE grown material are rationalised using a thermodynamic model which predicts that compensation of donors in VPE material is due to the donor-gallium vacancy complex GeGa V−ga whereas, in LPE material, the dominant acceptor making the material p type is the arsenic substituted state Ge−As. Mass action constants for the incorporation reactions for these entities and for the donor Ge+Ga are obtained. The compensation ratio in crystals grown from a congruent melt is predicted to be ND/NA ~ 5.9, and the transition to p type conductivity as one grows from Ga-rich solutions at progressively lower temperature is shown to occur at less than 100°C below the congruent melting point so that all LPE material should be p type. The superlinear behaviour of the total-germanium solubility curve at very high doping levels is postulated to be due to the formation of neutral GeGaGeAs pairs." @default.
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- W2313139048 date "1979-01-01" @default.
- W2313139048 modified "2023-09-25" @default.
- W2313139048 title "Solubility and point defect-dopant interactions in gallium arsenide—III" @default.
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- W2313139048 doi "https://doi.org/10.1016/0022-3697(79)90173-2" @default.
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