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- W2313221726 abstract "With continued scaling beyond 45 nm, endpointing is becoming essential for precise control of wafer-to-wafer and within-wafer uniformity during CMP processes. The Applied Materials FullVision™ endpoint system employs an in-line, large-spot, multi-wavelength light source (white light) and a spectrometer to collect spectral signals from the wafer while it is polishing. This makes possible a much more delicate and accurate control of endpoint triggering compared to the standard single-wavelength endpoint system. The FullVision system is beneficial for a variety of dielectric applications, including oxide, STI, and poly CMP. It has already been adopted by major memory customers and for BEOL copper inter-metal and top metal CMP on Applied Reflexion® LK CMP systems in high volume manufacturing. In this paper, we assessed the capability of FullVision to control the endpoint of a 28nm node ILD0 P1 polishing process on three kinds of patterned wafers with different masks. The results showed well-behaved linear fitting (> 0.98) of the endpoint traces of P1 polishing to the library data of a selected wafer, indicating that the FullVision system is qualified to moniter the ILD0 polishing process. Meanwhile, the endpoint times of tested wafers was controlled to within 25 seconds with the goodness-of-fit (GOF) value less than 2. These results demonstrated the capability of FullVision endpoint control for ILD0 P1 polish, indicating potential market growth for this system in 28nm CMP processes." @default.
- W2313221726 created "2016-06-24" @default.
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- W2313221726 date "2014-02-27" @default.
- W2313221726 modified "2023-09-24" @default.
- W2313221726 title "Fullvision Endpoint Application on ILD0 P1 Polish" @default.
- W2313221726 doi "https://doi.org/10.1149/06001.0633ecst" @default.
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