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• W2313278074 abstract "Thermal resistance and optical evanescent coupling of InP-based waveguide uni-traveling carrier photodiode (UTC-PD) integrated on silicon on insulator (SOI) through novel Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> bonding layer have been investigated with a constant heat spreading model and optical beam propagation method (BPM), respectively. Compared to UTC-PD integrated on SOI through conventional SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> bonding layer, there is a significant reduction (up to 70.41%) in terms of the total thermal resistance for the same structure through Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> bonding layer. On the other hand, based on the evanescent coupling simulation and analysis with BPM, as compared to SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> bonding scheme, no compromise in optical coupling efficiency was found by using Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> bonding layer. Our results suggest that Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> bonding layer could be a promising candidate for high-power and high-speed III-V photonic devices integrated on SOI, where thermal dissipation is a major concern." @default.
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• W2313278074 date "2014-10-01" @default.
• W2313278074 modified "2023-09-26" @default.
• W2313278074 title "Design and Analysis of InP-Based Waveguide Uni-Traveling Carrier Photodiode Integrated on Silicon-on-Insulator Through <inline-formula> <tex-math notation=TeX>$hbox{Al}_{2}hbox{O}_{3}$</tex-math></inline-formula> Bonding Layer" @default.
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• W2313278074 doi "https://doi.org/10.1109/jphot.2014.2352640" @default.
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