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• W2313594505 endingPage "1704" @default.
• W2313594505 startingPage "1698" @default.
• W2313594505 abstract "The crystal structure of the wurtzite-derived β-CuGaO2 was refined by Rietveld analysis of high-resolution powder diffraction data obtained from synchrotron X-ray radiation. Its structural characteristics are discussed in comparison with the other I-III-VI2 and II-VI oxide semiconductors. The cation and oxygen tetrahedral distortions of the β-CuGaO2 from an ideal wurtzite structure are small. The direct band-gap nature of the β-CuGaO2, unlike β-Ag(Ga,Al)O2, was explained by small cation and oxygen tetrahedral distortions. In terms of the thermal stability, the β-CuGaO2 irreversibly transforms into delafossite α-CuGaO2 at >460 °C in an Ar atmosphere. The transformation enthalpy was approximately -32 kJ mol(-1), from differential scanning calorimetry. This value is close to the transformation enthalpy of CoO from the metastable zincblende form to the stable rock-salt form. The monovalent copper in β-CuGaO2 was oxidized to divalent copper in an oxygen atmosphere and transformed into a mixture of CuGa2O4 spinel and CuO at temperatures >350 °C. These thermal properties indicate that β-CuGaO2 is stable at ≤300 °C in both reducing and oxidizing atmospheres while in its metastable form. Consequently, this material could be of use in optoelectronic devices that do not exceed 300 °C." @default.
• W2313594505 created "2016-06-24" @default.
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• W2313594505 date "2015-02-04" @default.
• W2313594505 modified "2023-10-05" @default.
• W2313594505 title "Structural and Thermal Properties of Ternary Narrow-Gap Oxide Semiconductor; Wurtzite-Derived β-CuGaO₂" @default.
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• W2313594505 doi "https://doi.org/10.1021/ic502659e" @default.
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